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Zinc oxide nanowire field effect transistor used as a pH sensor

dc.contributor.authorDitshego, Nonofo M.J.
dc.date.accessioned2022-05-04T09:47:17Z
dc.date.available2022-05-04T09:47:17Z
dc.date.issued2022-03
dc.description.abstractAn ion sensitive field effect transistor can outperform conventional ion-selective electrodes. Thus, a zinc oxide (ZnO) nanowire field effect transistor (NWFET) pH sensor was fabricated and measured. The sensor contained a channel with 1.7×1018 cm-3 donor concentration and 100 ZnO nanowires in parallel, each with the following dimensions: 10 μm×120 nm×20 nm. The active channel is passivated with an 18 nm Al2O3 layer. The device was measured under a controlled environment with and without pH solutions. The pH range was 3–9 with a sensitivity of 2.48 mV to 10.3 mV. The voltage sensitivity translates to a percentage value of 15%. The measurements obtained before and after the pH solution treatment demonstrate the possibility of re-use of the device by rinsing and brushing the sensing layer.en_US
dc.description.accessibilityunrestricteden_US
dc.description.departmentcteen_US
dc.description.levelphden_US
dc.identifier.citationDitshego, N. (2022). Zinc oxide nanowire field effect transistor used as a pH sensor. International Journal of Electrical and Electronic Engineering and Telecommunications, 11(2), 162-166. https://doi.org/10.18178/ijeetc.11.2.162-166en_US
dc.identifier.issn2319-2518
dc.identifier.urihttp://repository.biust.ac.bw/handle/123456789/439
dc.language.isoenen_US
dc.publisherInternational Journal of Electrical and Electronic Engineering & Telecommunicationsen_US
dc.subjectDevice sensitivityen_US
dc.subjectIon sensitive field effect transistoren_US
dc.subjectNanowireen_US
dc.subjectPH sensoren_US
dc.subjectZinc oxide (ZnO)en_US
dc.titleZinc oxide nanowire field effect transistor used as a pH sensoren_US

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