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Effect of Zr doping on the structural and electrical properties of spray deposited TiO2 thin films

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dc.contributor.author Oluwabi, Abayomi T
dc.contributor.author Juma, Albert O
dc.contributor.author Acik, Ilona Oja
dc.contributor.author Mere, Arvo
dc.contributor.author Krunks, Malle
dc.date.accessioned 2021-11-16T08:43:45Z
dc.date.available 2021-11-16T08:43:45Z
dc.date.issued 2018-06-20
dc.identifier.citation Oluwabi, T .et.al. (2018) Effect of Zr doping on the structural and electrical properties of spray deposited TiO2 thin films. Proceedings of the Estonian Academy of Sciences, 67(2), 147-157. https://doi.org/10.3176/proc.2018.2.05 en_US
dc.identifier.issn 17367530
dc.identifier.uri http://repository.biust.ac.bw/handle/123456789/378
dc.description The publication costs of this article were covered by the Estonian Academy of Sciences en_US
dc.description.abstract Doping is an effective material re-engineering technique, which provides a possibility of improving properties of materials for different applications. Herein, a Zr-doped TiO2 thin film was deposited applying the chemical spray pyrolysis method and the influence of varying zirconium dopant concentrations on the properties of the film was studied. Morphological studies showed that the Zr–TiO2 films were homogeneous with smaller grain sizes compared to the undoped TiO2 films. As-deposited Zr–TiO2 films were amorphous while the undoped TiO2 films were crystalline with anatase structure as revealed by both X-ray diffraction and Raman spectroscopy studies. The optical band gap of the Zr–TiO2 film was higher (3.44 eV) than that of the undoped TiO2 films (3.13 eV) showing a strong dependence on the phase composition. As revealed by energy dispersive spectroscopy analysis, the Zr/Ti ratio in the film increased from 0.014 to 0.13 as the doping concentration in the spray solution was increased from 5 to 40 mol%. The current–voltage (I–V) characteristic revealed a reduction of the leakage current in the Zr-doped TiO2 film (6.06 × 10–5 A) compared to the undoped TiO2 films (1.69 × 10–3 A) at 1 forward bias voltage. The dielectric relaxation response at the oxide–electrode interface dipole was strongly influenced by the Zr doping concentration in the film. en_US
dc.description.sponsorship This study was financially supported by the Estonian Ministry of Education and Research project IUT19-4, Tallinn University of Technology based financing project B24, European Union through the European Regional Development Fund project TK141 en_US
dc.language.iso en en_US
dc.publisher Estonian Academy Publishers en_US
dc.subject Chemical spray pyrolysis en_US
dc.subject Doping en_US
dc.subject Thin films en_US
dc.subject Dielectric relaxation en_US
dc.subject Zr–TiO2 en_US
dc.title Effect of Zr doping on the structural and electrical properties of spray deposited TiO2 thin films en_US
dc.description.level phd en_US
dc.description.accessibility unrestricted en_US
dc.description.department paa en_US


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