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A surface photovoltage study of surface defects on Co-doped TiO2 thin films deposited by spray pyrolysis

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dc.contributor.author Wafula, Henry
dc.contributor.author Juma, Albert
dc.contributor.author Sakwa, Thomas
dc.contributor.author Musembi, Robinson
dc.contributor.author Simiyu, Justus
dc.date.accessioned 2023-02-01T08:39:50Z
dc.date.available 2023-02-01T08:39:50Z
dc.date.issued 2016-07-22
dc.identifier.citation Wafula, H. et al. (2016) A surface photovoltage study of surface defects on Co-doped TiO2 thin films deposited by spray pyrolysis. Coatings, 6(3). https://doi.org/10.3390/coatings6030030. en_US
dc.identifier.issn 20796412
dc.identifier.uri http://repository.biust.ac.bw/handle/123456789/516
dc.description.abstract Surface photovoltage (SPV) spectroscopy is a powerful tool for studying electronic defects on semiconductor surfaces, at interfaces, and in bulk for a wide range of materials. Undoped and Cobalt-doped TiO 2 (CTO) thin films were deposited on Crystalline Silicon (c-Si) and Flourine doped Tin oxide (SnO 2 :F) substrates by chemical spray pyrolysis at a substrate temperature of 400 °C. The concentration of the Co dopant in the films was determined by Rutherford backscattering spectrometry and ranged between 0 and 4.51 at %. The amplitude of the SPV signals increased proportionately with the amount of Co in the films, which was a result of the enhancement of the slow processes of charge separation and recombination. Photogenerated holes were trapped at the surface, slowing down the time response and relaxation of the samples. The surface states were effectively passivated by a thin In 2 S 3 over-layer sprayed on top of the TiO 2 and CTO films. en_US
dc.language.iso en en_US
dc.subject Doping en_US
dc.subject Photovoltage en_US
dc.subject Spray pyrolysis en_US
dc.title A surface photovoltage study of surface defects on Co-doped TiO2 thin films deposited by spray pyrolysis en_US
dc.description.level phd en_US
dc.description.accessibility unrestricted en_US
dc.description.department paa en_US


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