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| dc.contributor.author | Ditshego, Nonofo M.J. | |
| dc.date.accessioned | 2022-05-04T09:47:17Z | |
| dc.date.available | 2022-05-04T09:47:17Z | |
| dc.date.issued | 2022-03 | |
| dc.identifier.citation | Ditshego, N. (2022). Zinc oxide nanowire field effect transistor used as a pH sensor. International Journal of Electrical and Electronic Engineering and Telecommunications, 11(2), 162-166. https://doi.org/10.18178/ijeetc.11.2.162-166 | en_US |
| dc.identifier.issn | 2319-2518 | |
| dc.identifier.uri | http://repository.biust.ac.bw/handle/123456789/439 | |
| dc.description.abstract | An ion sensitive field effect transistor can outperform conventional ion-selective electrodes. Thus, a zinc oxide (ZnO) nanowire field effect transistor (NWFET) pH sensor was fabricated and measured. The sensor contained a channel with 1.7×1018 cm-3 donor concentration and 100 ZnO nanowires in parallel, each with the following dimensions: 10 μm×120 nm×20 nm. The active channel is passivated with an 18 nm Al2O3 layer. The device was measured under a controlled environment with and without pH solutions. The pH range was 3–9 with a sensitivity of 2.48 mV to 10.3 mV. The voltage sensitivity translates to a percentage value of 15%. The measurements obtained before and after the pH solution treatment demonstrate the possibility of re-use of the device by rinsing and brushing the sensing layer. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | International Journal of Electrical and Electronic Engineering & Telecommunications | en_US |
| dc.subject | Device sensitivity | en_US |
| dc.subject | Ion sensitive field effect transistor | en_US |
| dc.subject | Nanowire | en_US |
| dc.subject | PH sensor | en_US |
| dc.subject | Zinc oxide (ZnO) | en_US |
| dc.title | Zinc oxide nanowire field effect transistor used as a pH sensor | en_US |
| dc.description.level | phd | en_US |
| dc.description.accessibility | unrestricted | en_US |
| dc.description.department | cte | en_US |
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